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VERSION:2.0
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CALSCALE:GREGORIAN
X-WR-CALNAME:How epitaxial transition metal nitrides are becoming part of A
 FRL’s Functional Materials Toolbox
X-WR-TIMEZONE:Eastern Time (US & Canada)
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DTSTAMP:20260819T050945Z
UID:tag:localist.com\,2008:EventInstance_889240
DTSTART:20140926T143000Z
DTEND:20140926T153000Z
DESCRIPTION:How epitaxial transition metal nitrides are becoming part of AF
 RL’s Functional Materials Toolbox \n\nDr. Brandon Howe Materials Enginee
 r\, AFRL\, WPAFB\, OH \n\nTransition metal nitrides are well-known to exhi
 bit a remarkable range of unique and interesting physical properties inclu
 ding tunable optical and electrical properties\, high-hardness and elastic
  modulus\, and robust high-temperature oxidation resistance. Through the u
 se of high-flux low-energy ion bombardment during film growth\, one is abl
 e to control ion flux and energy independently from the neutral metal flux
 \, facilitating unprecedented control over growth kinetics during high-rat
 e reactive sputter deposition. Incoming ions impinging the growth front dr
 astically increase adatom mobilities through momentum transfer\, enabling 
 high crystallinity epitaxial growth at substantially reduced growth temper
 atures. This scenario enables researchers to extend the single-phase compo
 sition field of a variety of immiscible or metastable alloys\, as well as 
 epitaxially grow these and other conducting materials on a wide range of s
 ingle crystal substrates\, despite their orientations or large lattice mis
 matches. \n\nI will begin my talk by describing the technique of controlla
 bly-unbalanced reactive magnetron sputter deposition by using Hf1-xAlxN as
  a model system\, extending the single-phase alloy composition field up to
  50 % AlN\, while demonstrating the effects composition and nanostructure 
 formation have on resultant film properties. \n\nI will continue by discus
 sing the current status of our efforts at AFRL\, and how we believe with o
 ur prior expertise in the area of epitaxial nitrides\, as well as our newl
 y renovated and revitalized epitaxy lab\, can lead to game-changing advanc
 es in two key technical areas: high-quality epitaxial magnetoelectric hete
 rostructures (as interlayer electrode materials and templates of oxide ove
 rlayer growth) and robust materials alternatives for next-generation resil
 ient plasmonics. \n\nDr. Brandon Howe is a Materials Engineer at Air Force
  Research Lab’s Materials and Manufacturing Directorate\, Nanoelectronic
  Materials Branch. He was recruited to AFRL under the SMART (Science Mathe
 matics\, and Research for Transformation) Scholar program in 2006. He grad
 uated in 2011 from University of Illinois at Urbana-Champaign\, after stud
 ying under the guidance of Profs. Ivan Petrov and Joe Greene. During his t
 ime there he won several awards in the area of Thin Films and Vacuum Techn
 ology. He has spent the last two years renovating\, redesigning and constr
 ucting a UHV PLD and magnetron sputter epitaxy suite and is now leading th
 e Epitaxial Magnetoelectrics effort for Next-Generation Tunable RF/Microwa
 ve components.
GEO:42.33812;-71.089355
LOCATION:442 Dana
SUMMARY:How epitaxial transition metal nitrides are becoming part of AFRL
 ’s Functional Materials Toolbox
URL;VALUE=URI:https://calendar.northeastern.edu/event/how_epitaxial_transit
 ion_metal_nitrides_are_becoming_part_of_afrls_functional_materials_toolbox
CATEGORIES:Seminar
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